• Corpus ID: 201859503

A NOVEL DEVICE BEHAVIOR OF Al / Coronene / n-GaAs / In ORGANIC BASED SCHOTTKY BARRIER DIODE

@inproceedings{Akn2019AND,
  title={A NOVEL DEVICE BEHAVIOR OF Al / Coronene / n-GaAs / In ORGANIC BASED SCHOTTKY BARRIER DIODE},
  author={{\"U}mm{\"u}han Akın and {\"O}mer Faruk Y{\"u}ksel and Osman Pakma and Haluk Koralay and Ş{\"u}kr{\"u} Çavdar and Nihat Tuğluoğlu},
  year={2019}
}
A new Schottky barrier diode of Al/Coronene/n-GaAs/In was successfully prepared using spincoating method. The interface state and electrical properties of Al/Coronene/n-GaAs Schottky barrier diode have been studied by current– voltage (I–V) data in dark and light. The key diode parameters such as ideality factor, Schottky barrier height, rectification ratio, series and shunt resistances were evaluated from I–V data. The effective forward conduction mechanisms were determined as the thermionic… 

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