A Multi-Layer Stackable Thin-Film Transistor (TFT) NAND-Type Flash Memory

@article{Lai2006AMS,
  title={A Multi-Layer Stackable Thin-Film Transistor (TFT) NAND-Type Flash Memory},
  author={E Lai and Hang-Ting Lue and Yi-Hsuan Hsiao and Jung-Yu Hsieh and Chi-Pin Lu and Szu-Yu Wang and Ling-Wu Yang and Tahone Yang and Kuang-Chao Chen and Jeng Gong and K. L. Hsieh and Rich Liu and Chih-Yuan Lu},
  journal={2006 International Electron Devices Meeting},
  year={2006},
  pages={1-4}
}
A double-layer TFT NAND-type flash memory is demonstrated, ushering into the era of three-dimensional (3D) flash memory. A TFT device using bandgap engineered SONOS (BE-SONOS) (Lue et al., 2005, Lai et al., 2006) with fully-depleted (FD) poly silicon (60 nm) channel and tri-gate P+-poly gate is integrated into a NAND array. Small devices (L/W=0.2/0.09 mum) with excellent performance and reliability properties are achieved. The bottom layer shows no sign of reliability degradation compared to… CONTINUE READING
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  • E. K. Lai, H. T. Lue, +6 authors K. C. Chen
  • Gong, K.Y. Hsieh, J.Ku, R. Liu, and C.Y. Lu, “A…
  • 2006
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