A Monolithically-Integrated Optical Receiver in Standard 45-nm SOI

Abstract

A monolithically-integrated optical receiver for lowenergy on-chip and off-chip communication is presented. The monolithic photodiode integration enables the energy-efficient and high-sensitivity sense-amplifier-based receiver design. The receiver is characterized in situ and shown to operate with μAsensitivity at 3.5 Gb/s with a power consumption of 180 μW (52 fJ/bit) and area of 108 μm. This work demonstrates that photonics and electronics can be jointly integrated in a standard 45-nm SOI process.

DOI: 10.1109/JSSC.2012.2191684

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Cite this paper

@inproceedings{Georgas2011AMO, title={A Monolithically-Integrated Optical Receiver in Standard 45-nm SOI}, author={Michael Georgas and Jason Orcutt and Rajeev J. Ram and Vladimir Stojanovic}, booktitle={J. Solid-State Circuits}, year={2011} }