A Monolithic, 500 °C Operational Amplifier in 4H-SiC Bipolar Technology

@article{Hedayati2014AM5,
  title={A Monolithic, 500 °C Operational Amplifier in 4H-SiC Bipolar Technology},
  author={Raheleh Hedayati and Luigia Lanni and Saul Rodriguez and Bengt Gunnar Malm and Ana Rusu and Carl-Mikael Zetterling},
  journal={IEEE Electron Device Letters},
  year={2014},
  volume={35},
  pages={693-695}
}
A monolithic bipolar operational amplifier (opamp) fabricated in 4H-SiC technology is presented. The opamp has been used in an inverting negative feedback amplifier configuration. Wide temperature operation of the amplifier is demonstrated from 25°C to 500°C. The measured closed loop gain is around 40 dB for all temperatures whereas the 3 dB bandwidth increases from 270 kHz at 25°C to 410 kHz at 500°C. The opamp achieves 1.46 V/μs slew rate and 0.25% total harmonic distortion. This is the first… CONTINUE READING

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