A Millimeter-Wave (23–32 GHz) Wideband BiCMOS Low-Noise Amplifier

@article{ElNozahi2010AM,
  title={A Millimeter-Wave (23–32 GHz) Wideband BiCMOS Low-Noise Amplifier},
  author={Mohamed El-Nozahi and Edgar S{\'a}nchez-Sinencio and Kamran Entesari},
  journal={IEEE Journal of Solid-State Circuits},
  year={2010},
  volume={45},
  pages={289-299}
}
This paper presents a 23-32 GHz wideband BiCMOS low-noise amplifier (LNA). The LNA utilizes coupled-resonators to provide a wideband load. To our knowledge, the proposed LNA achieves the widest bandwidth with minimum power consumption using 0.18 ¿m BiCMOS technology in K-band. Analytical expressions for the wideband input matching, gain, noise figure and linearity are presented. The LNA is implemented using 0.18 ¿m BiCMOS technology and occupies an area of 0.25 mm2 . It achieves a voltage gain… CONTINUE READING
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