A Metamorphic HEMT S-MMIC Amplifier with 16.1 dB Gain at 460 GHz

@article{Tessmann2010AMH,
  title={A Metamorphic HEMT S-MMIC Amplifier with 16.1 dB Gain at 460 GHz},
  author={Axel Tessmann and Arnulf Leuther and Rainer L{\"o}sch and Matthias Seelmann-Eggebert and Hermann Massler},
  journal={2010 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)},
  year={2010},
  pages={1-4}
}
In this paper, we present a four-stage submillimeter-wave monolithic integrated circuit (S-MMIC) amplifier for use in next generation radar and communication systems operating in the WR-2.2 waveguide band (325 - 500 GHz). The low-noise amplifier circuit (LNA) has been realized using a 35 nm InAlAs/InGaAs based metamorphic high electron mobility transistor (mHEMT) technology and demonstrates a peak gain of 16.1 dB at 460 GHz and a small-signal gain of more than 13 dB in the bandwidth from 433 to… CONTINUE READING
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