A Meeting of Materials: Integrating Diverse Semiconductor Technologies for Improved Performance at Lower Cost

@article{GutierrezAitken2017AMO,
  title={A Meeting of Materials: Integrating Diverse Semiconductor Technologies for Improved Performance at Lower Cost},
  author={Augusto Gutierrez-Aitken and Bryan Yi-Cheng Wu and Dennis W. Scott and Ken Sato and Benjamin Poust and Monte Watanabe and Cedric Monier and Nancy Y Lin and Xiang Zeng and Eric Nakamura and Peter Cheng and Eric N. Kaneshiro and Wesley Chan and I. Smorchkova and Khanh Thai and Sujane Wang and D. Slavin and A. Oki and Reynold Kagiwada},
  journal={IEEE Microwave Magazine},
  year={2017},
  volume={18},
  pages={60-73}
}
Semiconductor technology has seen rapid advances in recent years. Complementary?metal-oxide-semiconductor (CMOS) technology is providing tremendous digital processing power by integrating billions of transistors. Indium phosphide (InP) has bridged the terahertz frequency barrier. Gallium nitride (GaN) is offering unprecedented solid-state RF power across the microwave spectrum. Diverse, accessible heterogeneous integration (DAHI) allows engineers to take advantage of all of these advances by… CONTINUE READING
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  • A. Gutierrez-Aitken, P. Chang-Chien, +14 authors A. Oki
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