A MOSFET electron mobility model of wide temperature range (77 - 400 K) for IC simulation

@article{Chain1997AME,
  title={A MOSFET electron mobility model of wide temperature range (77 - 400 K) for IC simulation},
  author={Kenneth W. Chain and Jianhui Huang and Jon S. Duster and Ping K. Ko and Chenming Calvin Hu},
  journal={Semiconductor Science and Technology},
  year={1997},
  volume={12},
  pages={355-358}
}
Based on the physics of scattering mechanisms of MOSFET inversion layer carriers at different temperatures and vertical electric fields, a new unified mobility model of wide temperature (77 - 400 K) and range is proposed for IC simulation. Measurement data taken in a wide range of temperatures and electric fields are compared with the simulation results of a MOSFET current model implementing this new mobility equation. Excellent agreement between the simulation and measurement data is found. 

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