A MOS-controlled triac device
@article{Scharf1978AMT, title={A MOS-controlled triac device}, author={B. W. Scharf and James D. Plummer}, journal={1978 IEEE International Solid-State Circuits Conference. Digest of Technical Papers}, year={1978}, volume={XXI}, pages={222-223} }
A merged device - an insulated-gate triac - has been developed and modeled for analysis and design using a circuit analysis program combining MOS and bipolar capabilities. Applications include crosspoint switches, power control and microprocessor interface.
15 Citations
Insulated-gate planar thyristors: I—Structure and basic operation
- PhysicsIEEE Transactions on Electron Devices
- 1980
A high-voltage planar triac which is controlled by an insulated-gate terminal is described. Its structure is related to the DMOS transistor on which it is based and its multiple operating modes are…
Functional integration of power MOS and bipolar devices
- Engineering1980 International Electron Devices Meeting
- 1980
The development of vertical power MOSFETs has made it possible for MOS and bipolar functions to be combined advantageously. The SIPMOS (Siemens Power MOS) technique is eminently suitable for this…
Insulated-gate planar thyristors: II—Quantitative modeling
- Engineering, PhysicsIEEE Transactions on Electron Devices
- 1980
The basic modes of operation of a new planar, high-voltage thyristor which is controlled by an insulated gate are described in Part I. This paper presents models for the dc operation of the device.…
10/spl Omega/ 370 V high voltage switches for line circuit application
- EngineeringIEEE Journal of Solid-State Circuits
- 1984
The authors describe the integration of 8 high-voltage switches together with their low-voltage polygate CMOS control logic in an 18-pin package, the HVX chip. This custom IC is intended to be used…
Turn-off failures in individual and paralleled MCT's
- Physics
- 1996
A turn-off failure mode in individual MOS-controlled thyristors (MCTs), initiated by a long gate voltage rise-time, is identified and analyzed. It is shown to be caused by turn-off current crowding…
Analysis of n-channel MOS-controlled thyristors
- Engineering
- 1991
The turn-off of the n-channel MOS-controlled thyristor (NMCT) is analyzed using two-dimensional simulation. A lateral NMOS-controlled thyristor structure, LNMCT, suitable for HVIC application is also…
Turn-off Failures in Individual
- Physics
- 1996
Abstruct- A turn-off failure mode in individual MOScontrolled thyristors (MCT's), initiated by a long gate voltage rise-time, is identified and analyzed. It is shown to be caused by turn-off current…
The Invention and Demonstration of the IGBT [A Look Back]
- EngineeringIEEE Power Electronics Magazine
- 2015
Much of the credit for 20th-century advances in computing and communication goes to the silicon transistor and the integrated circuit. The same may be said for the silicon insulated gate bipolar…
MOS-Controlled thyristors—A new class of power devices
- EngineeringIEEE Transactions on Electron Devices
- 1986
A new class of power devices is described that is based on an optimal combination of MOS and thyristor elements. Devices of this class function in the ON-state and OFF-state in a manner…
Turn-off failures in individual and paralleled MCTs
- Physics[1993] Proceedings of the 5th International Symposium on Power Semiconductor Devices and ICs
- 1993
A turn-off failure mode in individual MCTs (MOS-controlled thyristors) initiated by a long gate voltage rise-time is identified and analyzed. It is shown to be caused by turn-off current crowding in…
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