A Low Voltage SRAM Using Resonant Supply Boosting

@article{Joshi2017ALV,
  title={A Low Voltage SRAM Using Resonant Supply Boosting},
  author={Rajiv V. Joshi and Matthew M. Ziegler and Holger Wetter},
  journal={IEEE Journal of Solid-State Circuits},
  year={2017},
  volume={52},
  pages={634-644}
}
This paper presents a novel resonating inductor-based supply boosting scheme for low-voltage static random-access memories and logic in deep 14-nm silicon on insulator (SOI) FinFET technologies. The technique combines capacitive (C) and inductive (L) boosting for the first time. Simulation and measured hardware results from a 14-nm test chip show that this new technique is able to improve <inline-formula> <tex-math notation="LaTeX">$V_{\mathrm {min}}$ </tex-math></inline-formula> (down to 0.3 V… CONTINUE READING
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