A Low Power Inductorless LNA With Double ${\rm G} _{\rm m}$ Enhancement in 130 nm CMOS

  title={A Low Power Inductorless LNA With Double \$\{\rm G\} _\{\rm m\}\$ Enhancement in 130 nm CMOS},
  author={François Belmas and Fr{\'e}d{\'e}ric Hameau and Jean-Michel Fournier},
  journal={IEEE Journal of Solid-State Circuits},
This paper presents the design of a low power differential Low Noise Amplifier (LNA) in 130 nm CMOS technology for 2.45 GHz ISM band applications. The circuit benefits from several gm-enhancements. These techniques provide a high gain and reduced Noise Figure (NF) in spite of the low intrinsic gm of the MOS transistors. Moreover, the circuit is fully inductorless. Main design points are described and the performance tradeoffs of the circuit are discussed. A prototype has been implemented and it… CONTINUE READING
Highly Cited
This paper has 41 citations. REVIEW CITATIONS


Publications citing this paper.
Showing 1-10 of 26 extracted citations


Publications referenced by this paper.
Showing 1-10 of 20 references

0.5 V ultra-low power wideband LNA with forward body bias technique

  • J. Liu, H. Liao, R. Huang
  • Electron. Lett., vol. 45, no. 6, pp. 289–290, Mar…
  • 2009
1 Excerpt

Similar Papers

Loading similar papers…