A Low Power Inductorless LNA With Double ${\rm G} _{\rm m}$ Enhancement in 130 nm CMOS

@article{Belmas2012ALP,
  title={A Low Power Inductorless LNA With Double \$\{\rm G\} _\{\rm m\}\$ Enhancement in 130 nm CMOS},
  author={François Belmas and Fr{\'e}d{\'e}ric Hameau and Jean-Michel Fournier},
  journal={IEEE Journal of Solid-State Circuits},
  year={2012},
  volume={47},
  pages={1094-1103}
}
This paper presents the design of a low power differential Low Noise Amplifier (LNA) in 130 nm CMOS technology for 2.45 GHz ISM band applications. The circuit benefits from several gm-enhancements. These techniques provide a high gain and reduced Noise Figure (NF) in spite of the low intrinsic gm of the MOS transistors. Moreover, the circuit is fully inductorless. Main design points are described and the performance tradeoffs of the circuit are discussed. A prototype has been implemented and it… CONTINUE READING
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