A Low Phase-Noise $X$-Band MMIC VCO Using High-Linearity and Low-Noise Composite-Channel ${\hbox{Al}}_{0.3}{\hbox{Ga}}_{0.7}{\hbox{N/Al}}_{0.05}{\hbox{Ga}}_{0.95}{\hbox{N/GaN}}$ HEMTs

Abstract

A low phase-noise X-band monolithic-microwave integrated-circuit voltage-controlled oscillator (VCO) based on a novel high-linearity and low-noise composite-channel Al0.3Ga0.7N/Al0.05Ga0.95 N/GaN high electron mobility transistor (HEMT) is presented. The HEMT has a 1 mumtimes100 mum gate. A planar inter-digitated metal-semiconductor-metal varactor is used… (More)

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