A Low Loss High Isolation DC-60 GHz SPDT Traveling-Wave Switch With a Body Bias Technique in 90 nm CMOS Process

@article{Chang2010ALL,
  title={A Low Loss High Isolation DC-60 GHz SPDT Traveling-Wave Switch With a Body Bias Technique in 90 nm CMOS Process},
  author={Hong-Yeh Chang and Ching-Yan Chan},
  journal={IEEE Microwave and Wireless Components Letters},
  year={2010},
  volume={20},
  pages={82-84}
}
In this letter, a low loss high isolation broadband single-port double-throw (SPDT) traveling-wave switch using 90 nm CMOS technology is presented. A body bias technique is utilized to enhance the circuit performance of the switch, especially for the operation frequency above 30 GHz. The parasitic capacitance between the drain and source of the NMOS transistor can be further reduced using the negative body bias technique. Moreover, the insertion loss, the input 1 dB compression point (P1 dB… CONTINUE READING