A Low Leakage 9 T SRAM Cell for Ultra-Low Power Operation

@inproceedings{2007ALL,
  title={A Low Leakage 9 T SRAM Cell for Ultra-Low Power Operation},
  author={},
  year={2007}
}
  • Published 2007
This paper presents the design and evaluation of a new SRAM cell made of nine transistors (9T). The proposed 9T cell utilizes a scheme with separate read and write wordlines; it is shown that the 9T cell achieves improvements in power dissipation, performance and stability compared with previous designs (that require 10T and 8T) for low-power operation. The 9T scheme is amenable to small feature sizes as encountered in the deep sub-micron/nano ranges of CMOS technology. Simulation results using… CONTINUE READING
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