A Junctionless Nanowire Transistor With a Dual-Material Gate

Abstract

A dual-material-gate junctionless nanowire transistor (DMG-JNT) is proposed in this paper. Its characteristic is demonstrated and compared with a generic single-material-gate JNT using 3-D numerical simulations. The results show that the DMG-JNT has a number of desirable features, such as high ON-state current, a large ON/OFF current ratio, improved… (More)

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Citation Velocity: 9

Averaging 9 citations per year over the last 3 years.

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