A Highly Survivable 3-7 GHz GaN Low-Noise Amplifier

@article{Rudolph2006AHS,
  title={A Highly Survivable 3-7 GHz GaN Low-Noise Amplifier},
  author={Matthias Rudolph and R. Behtash and Klaus Hirche and Joachim Wurfl and Wolfgang Heinrich and Gux0308nther Trankle},
  journal={2006 IEEE MTT-S International Microwave Symposium Digest},
  year={2006},
  pages={1899-1902}
}
A highly rugged low-noise GaN MMIC amplifier is presented that operates in the frequency band 3-7 GHz. A noise figure NF below 2.3 dB is measured from 3.5 to 7 GHz, with NF < 1.8 dB between 5 and 7 GHz. The survivability of the LNA was assessed by several stress-tests, injecting in the input up to 36dBm at 4 GHz for 16 hours. To the authors knowledge, these are the most severe survivability tests for these circuits reported in the literature so far 
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Robust GaN HEMT Low-Noise Amplifier MMICs for X-Band Applications

  • D. Krausse, R. Quay, +9 authors G. Weimann
  • in: Dig. 12th GAAS Symp., 2004, pp. 71 - 74.
  • 2004
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