A Highly Efficient Statistical Compact Model Parameter Extraction Scheme

@article{Takeuchi2005AHE,
  title={A Highly Efficient Statistical Compact Model Parameter Extraction Scheme},
  author={Kiyoshi Takeuchi and Masami Hane},
  journal={2005 International Conference On Simulation of Semiconductor Processes and Devices},
  year={2005},
  pages={135-138}
}
A new method of determining statistical compact model parameters is proposed. The variations of measured device characteristics can be efficiently translated into the variations of a set of transistor model parameters. Since the target of fitting is not the I-V curves of individual samples, but the statistically analyzed results of the I-V data, the… CONTINUE READING