A High-Speed BE-SONOS NAND Flash Utilizing the Field-Enhancement Effect of FinFET

Abstract

Theoretical calculation indicates that when the fin width is comparable to the EOT of the ONO, the bottom oxide electric field around the fin tip is significantly increased, resulting in the enhanced program/erase efficiency. We also discover that the non-uniform injection along the fin changes DC characteristics (S.S. and g<sub>m</sub>) during program… (More)

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Cite this paper

@article{Hsu2007AHB, title={A High-Speed BE-SONOS NAND Flash Utilizing the Field-Enhancement Effect of FinFET}, author={Tzu-Hsuan Hsu and Hang-Ting Lue and Erh-Kun Lai and Jung-Yu Hsieh and Szu-Yu Wang and Ling-Wu Yang and Ya-Chin King and T. Yang and Kuang-Chao Chen and K. S. Hsieh and Rich Liu and Chih-Yuan Lu}, journal={2007 IEEE International Electron Devices Meeting}, year={2007}, pages={913-916} }