A High-Performance Resonant Gate-Drive Circuit for MOSFETs and IGBTs

@article{Chen2014AHR,
  title={A High-Performance Resonant Gate-Drive Circuit for MOSFETs and IGBTs},
  author={Runruo Chen and Fang Zheng Peng},
  journal={IEEE Transactions on Power Electronics},
  year={2014},
  volume={29},
  pages={4366-4373}
}
This paper presents a high-performance resonant gate-drive circuit for MOSFETs and IGBTs, which has high efficiency, fast switching capability, high robustness, and simple topology and control scheme. The proposed gate-drive circuit recycles the gate energy through a resonant inductor. The resonant inductor is precharged before resonance to achieve fast switching. After resonance, the circuit feeds back the remaining energy stored in the inductor. Power loss of the resonant gate-drive circuit… CONTINUE READING
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