A High-Frequency Transconductance Method for Characterization of High- $\kappa$ Border Traps in III-V MOSFETs

@article{Johansson2013AHT,
  title={A High-Frequency Transconductance Method for Characterization of High- \$\kappa\$ Border Traps in III-V MOSFETs},
  author={Sofia Johansson and Martin Berg and K. Persson and Erik Lind},
  journal={IEEE Transactions on Electron Devices},
  year={2013},
  volume={60},
  pages={776-781}
}
A novel method that reveals the spatial distribution of border traps in III-V metal-oxide-semiconductor field-effect transistors (MOSFETs) is presented. The increase in transconductance with frequency is explored in a very wide frequency range (1 Hz-70 GHz) and a distributed RC network is used to model the oxide and trap capacitances. An evaluation of vertical InAs nanowire MOSFETs and surface-channel InGaAs MOSFETs with Al<sub>2</sub>O<sub>3</sub>/HfO<sub>2</sub> high-κ gate dielectric shows a… CONTINUE READING