A High-Efficiency Switched-Capacitance HTFET Charge Pump for Low-Input-Voltage Applications

Abstract

This paper presents a high-efficiency switched-capacitance charge pump in 20 nm III-V heterojunction tunnel field-effect transistor (HTFET) technology for low-input-voltage applications. The steep-slope and low-threshold HTFET device characteristics are utilized to extend the input voltage range to below 0.20 V. Meanwhile, the uni-directional current… (More)
DOI: 10.1109/VLSID.2015.58

Topics

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