A GSM/EDGE dual-mode, 900/1800/1900-MHz triple-band HBT MMIC power amplifier module

Abstract

This paper describes a 3.5-V operation HBT MMIC power amplifier module for use in GSM/EDGE dual-mode, 900/1800/1900-MHz triple band handset applications. With diode switches and a band select switch built on the MMIC, the module delivers a P/sub out/ of 35.5 dBm and a PAE of about 50% for GSM900, a 33.4-dBm P/sub out/ and a 45% PAE for GSM1800/1900. While… (More)

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Cite this paper

@article{Yamamoto2002AGD, title={A GSM/EDGE dual-mode, 900/1800/1900-MHz triple-band HBT MMIC power amplifier module}, author={Kohji Yamamoto and Tomoyuki Asada and S. Suzuki and Tetsuji Miura and A. Inoue and Shinichi Miyakuni and Jun Otsuji and Ryo Hattori and Yasusuke Miyazaki and Takuya Shimura}, journal={2002 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium. Digest of Papers (Cat. No.02CH37280)}, year={2002}, pages={245-248} }