A Fully Three-Dimensional Atomistic Quantum Mechanical Study on Random Dopant-Induced Effects in 25-nm MOSFETs

@article{Jiang2008AFT,
  title={A Fully Three-Dimensional Atomistic Quantum Mechanical Study on Random Dopant-Induced Effects in 25-nm MOSFETs},
  author={Xiangwei Jiang and Hui-Xiong Deng and J. Luo and Shu-Shen Li and Lin-Wang Wang},
  journal={IEEE Transactions on Electron Devices},
  year={2008},
  volume={55},
  pages={1720-1726}
}
A fully 3-D atomistic quantum mechanical simulation is presented to study the random dopant-induced effects in nanometer metal-oxide-semiconductor field-effect transistors. The empirical pseudopotential is used to represent the single particle Hamiltonian, and the linear combination of bulk band method is used to solve the million atom Schrodinger equation. The gate threshold fluctuation and lowering due to the discrete dopant configurations are studied. It is found that quantum mechanical… CONTINUE READING

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