A Fully Integrated Inductor-Based GaN Boost Converter With Self-Generated Switching Signal for Vehicular Applications

@article{Choi2016AFI,
  title={A Fully Integrated Inductor-Based GaN Boost Converter With Self-Generated Switching Signal for Vehicular Applications},
  author={Pilsoon Choi and Ujwal Radhakrishna and Chirn Chye Boon and Dimitri A. Antoniadis and Li-Shiuan Peh},
  journal={IEEE Transactions on Power Electronics},
  year={2016},
  volume={31},
  pages={5365-5368}
}
An inductor-based GaN dc-boost converter with self-generated switching signal is proposed to remove power and area consuming gate drivers for toggling a large transistor switch. All the active and passive components are integrated on a 3 mm ×3 mm die using 0.25-μm GaN-on-SiC process. The circuit operates at 680-MHz switching frequency with 0.24 W/mm2 power density at 20-V output voltage for vehicular applications with 12-V car battery input. 
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