A Fully Integrated 7.3 kV HBM ESD-Protected Transformer-Based 4.5–6 GHz CMOS LNA

Abstract

The increasing mask costs of modern scaled CMOS makes silicon area precious. Meanwhile, the lowering oxide thickness seriously toughens ESD protection of RF circuits, pushing towards area-demanding inductor-based ESD protection techniques. This paper presents a transformer-based ESD protection technique for inductor-based LNAs. With no area penalty, an ESD… (More)

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