A Full-Range Drain Current Model for Double-Gate Junctionless Transistors

@article{Duarte2011AFD,
  title={A Full-Range Drain Current Model for Double-Gate Junctionless Transistors},
  author={Juan Pablo Duarte and Sung-Jin Choi and Yang-Kyu Choi},
  journal={IEEE Transactions on Electron Devices},
  year={2011},
  volume={58},
  pages={4219-4225}
}
A drain current model available for full-range operation is derived for long-channel double-gate junctionless transistors. Including dopant and mobile carrier charges, a continuous 1-D charge model is derived by extending the concept of parabolic potential approximation for the subthreshold and the linear regions. Based on the continuous charge model, the Pao-Sah integral is analytically carried out to obtain a continuous drain current model. The proposed model is appropriate for compact… CONTINUE READING
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