A Framework for Reliability Assessment in Multilevel Phase-Change Memory

Abstract

Multilevel-cell (MLC) storage is the preferred way for achieving increased capacity and thus lower cost-per-bit in memory technologies. In phase-change memory (PCM), MLC storage is hampered by noise and resistance drift. In this paper the issue of reliability in MLC PCM devices is addressed at the array level. The purpose of this study is to identify the… (More)

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