A Fitting Model for Asymmetric $I$ – $V$ Characteristics of Graphene FETs for Extraction of Intrinsic Mobilities

  title={A Fitting Model for Asymmetric  \$I\$ – \$V\$  Characteristics of Graphene FETs for Extraction of Intrinsic Mobilities},
  author={Akira Satou and Gen Tamamushi and Kenta Sugawara and Junki Mitsushio and Victor Ryzhii and Taiichi Otsuji},
  journal={IEEE Transactions on Electron Devices},
A fitting model is developed for accounting the asymmetric ambipolarities in the I-V characteristics of graphene FETs (G-FETs) with doped channels, originating from the thermionic emission and interband tunneling at the junctions between the gated and access regions. Using the model, the gate-voltage-dependent intrinsic mobility as well as other intrinsic and extrinsic device parameters can be extracted. We apply it to a top-gated G-FET with a graphene channel grown on a SiC substrate and with… 

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