• DOI:10.1109/TED.2016.2578325
• Corpus ID: 21266085

A Fitting Model for Asymmetric $I$ – $V$ Characteristics of Graphene FETs for Extraction of Intrinsic Mobilities

@article{Satou2016AFM,
  title={A Fitting Model for Asymmetric  \$I\$ – \$V\$  Characteristics of Graphene FETs for Extraction of Intrinsic Mobilities},
  author={Akira Satou and Gen Tamamushi and Kenta Sugawara and Junki Mitsushio and Victor Ryzhii and Taiichi Otsuji},
  journal={IEEE Transactions on Electron Devices},
  year={2016},
  volume={63},
  pages={3300-3306}
}

• A. Satou, G. Tamamushi, +3 authors T. Otsuji
• Published 29 February 2016
• Physics
• IEEE Transactions on Electron Devices

A fitting model is developed for accounting the asymmetric ambipolarities in the I-V characteristics of graphene FETs (G-FETs) with doped channels, originating from the thermionic emission and interband tunneling at the junctions between the gated and access regions. Using the model, the gate-voltage-dependent intrinsic mobility as well as other intrinsic and extrinsic device parameters can be extracted. We apply it to a top-gated G-FET with a graphene channel grown on a SiC substrate and with SiN gate dielectric that we reported previously, and we demonstrate that it can excellently fit its asymmetric I-V characteristic.