A Finite-Oxide Thickness-Based Analytical Model for Negative Bias Temperature Instability

@article{Kumar2009AFT,
  title={A Finite-Oxide Thickness-Based Analytical Model for Negative Bias Temperature Instability},
  author={S. V. Kumar and C. H. Kim and S. S. Sapatnekar},
  journal={IEEE Transactions on Device and Materials Reliability},
  year={2009},
  volume={9},
  pages={537-556}
}
Negative bias temperature instability (NBTI) in PMOS transistors has become a serious reliability concern in present-day digital circuit design. With continued technology scaling, and reducing oxide thickness, it has become imperative to accurately determine its effects on temporal circuit degradation, and thereby ensure reliable operation for a finite period of time. A reaction-diffusion (R-D)-based framework is developed for determining the number of interface traps as a function of time, for… CONTINUE READING
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