A Ferroelectric and Charge Hybrid Nonvolatile Memory—Part I: Device Concept and Modeling

We present a new one-transistor hybrid nonvolatile memory based on the combination of two distinctive mechanisms, namely, remanent polarization in ferroelectrics and charge injection into floating nodes. The gate stack design and the memory operation of the hybrid device are aimed to offer mutually complementing benefits between the two mechanisms, thereby… CONTINUE READING