A Ferroelectric Thin Film Transistor Based on Annealing-Free HfZrO Film

Abstract

A ferroelectric thin film transistor (Fe-TFT) based on annealing-free hafnium zirconium oxide (HfZrO) is demonstrated in this paper. Indium zinc oxide was used as channel semiconductor. The as-deposited 30-nm HfZrO film implemented as gate dielectric was proved to be crystallized with a mixture of monoclinic, tetragonal, and orthorhombic phases and showed… (More)

Topics

5 Figures and Tables

Slides referencing similar topics