A Fast Four-Point Sense Methodology for Extraction of Circuit-Relevant Degradation Parameters

@article{Kerber2010AFF,
  title={A Fast Four-Point Sense Methodology for Extraction of Circuit-Relevant Degradation Parameters},
  author={A. Kerber and E. Cartier},
  journal={IEEE Electron Device Letters},
  year={2010},
  volume={31},
  pages={912-914}
}
A fast measurement methodology to extract, in a single stress sequence, four different circuit-relevant degradation parameters is introduced. The methodology is used to compare the degradation of the linear and saturation drain currents, as well as the linear and saturation threshold voltages, during positive bias temperature instability (BTI) (PBTI) in metal-gate/high-k (MG/HK) nFETs and during negative BTI (NBTI) in conventional poly-Si/SiON pFET devices. No gm degradation is observed for… CONTINUE READING