A Drain-Extended MOS Device With Spreading Filament Under ESD Stress

  title={A Drain-Extended MOS Device With Spreading Filament Under ESD Stress},
  author={Mayank Shrivastava and Harald Gossner and Christian C. Russ},
  journal={IEEE Electron Device Letters},
Based on 3-D TCAD simulations, a ten-times improvement in the ESD performance of drain-extended NMOS device is predicted by incorporating deep p-implant underneath the n+ drain region. The proposed modification does not degrade the intrinsic MOS characteristics, thus enabling a self-protection ESD concept. Moreover, a detailed physical insight toward the achieved improvement is given. 
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Device integration for ESD robustness of high voltage power MOSFETs

  • C. Duvvury, J. Rodriguez, C. Jones, M. Smayling
  • IEDM Tech. Dig, 1994, pp. 407–410.
  • 1994
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