A Degenerately Doped $\hbox{In}_{0.53}\hbox{Ga}_{0.47} \hbox{As}$ Bipolar Junction Transistor

@article{Yalon2011ADD,
  title={A Degenerately Doped \$\hbox\{In\}_\{0.53\}\hbox\{Ga\}_\{0.47\} \hbox\{As\}\$ Bipolar Junction Transistor},
  author={Eilam Yalon and D C Elias and Arkady Gavrilov and Shimon Cohen and Ran Halevy and Dan Ritter},
  journal={IEEE Electron Device Letters},
  year={2011},
  volume={32},
  pages={21-23}
}
An InGaAs bipolar junction transistor having degenerately doped base and emitter layers is reported. The high emitter efficiency is attributed to the asymmetry between the density of states of the conduction and valence bands. A high-frequency transistor having base and emitter metals simultaneously deposited on the emitter layer is demonstrated. The base contact backward diode resistance was 125 Ω · μm2. 

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