A DC-90 GHz 4-Vpp differential linear driver in a 0.13 μm SiGe:C BiCMOS technology for optical modulators

@article{Rito2017ADG,
  title={A DC-90 GHz 4-Vpp differential linear driver in a 0.13 μm SiGe:C BiCMOS technology for optical modulators},
  author={Pedro Rito and I. Garcia L{\'i}{\'o}pez and Ahmed Awny and A. C. Ulusoy and Dietmar Kissinger},
  journal={2017 IEEE MTT-S International Microwave Symposium (IMS)},
  year={2017},
  pages={439-442}
}
In this paper, a linear driver for optical modulators in a 0.13 μm SiGe:C BiCMOS technology with fT/fmax of 300/500 GHz is presented. The driver is implemented following a distributed amplifier topology in a differential manner. In a 50-Ω environment, the circuit delivers a maximum differential output amplitude of 4 Vpp, featuring a small-signal gain of 13 dB and 3-dB bandwidth of 90 GHz. Time-domain measurements using OOK (up to 56 Gb/s) and PAM-4 (at 30Gbaud) are performed, demonstrating the… CONTINUE READING

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