A DC-50 GHz SPDT switch with maximum insertion loss of 1.9 dB in a commercial 0.13-μm SOI technology

Abstract

In this paper, a low insertion loss, high isolation, ultra wideband (DC to 50 GHz) single-pole double-throw (SPDT) switch using 0.13 μm SOI technology is presented. The switch is designed by using a series-shunt configuration with input and output matching networks. The channel length and gate bias impacts on switch performance are studied. It is found that… (More)

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