A Composite Free Layer for High Density Magnetic Random Access Memory with Low Writing Field

@article{Meng2006ACF,
  title={A Composite Free Layer for High Density Magnetic Random Access Memory with Low Writing Field},
  author={Hao Ye Meng and J. Wang},
  journal={INTERMAG 2006 - IEEE International Magnetics Conference},
  year={2006},
  pages={925-925}
}
In this work, a new approach is demonstrated to effectively lower the magnetic random access memory (MRAM) writing field while the memory cell thermal stability is still maintained at a safe level. The soft layer is an FeSiO granular layer and the hard layer is a CoFe/Pt multilayer. 

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