A Comparative Study of Electrical Characteristic on Sub-10-nm Double-Gate MOSFETs

@article{Li2005ACS,
  title={A Comparative Study of Electrical Characteristic on Sub-10-nm Double-Gate MOSFETs},
  author={Yong Li and H.-M. Chou},
  journal={IEEE Transactions on Nanotechnology},
  year={2005},
  volume={4},
  pages={645-647}
}
We explore the structure effect on electrical characteristics of sub-10-nm double-gate metal–oxide–semiconductor field-effect transistors (DG MOSFETs). To quantitatively assess the nanoscale DG MOSFETs' characteristics, the on/off current ratio, subthreshold swing, threshold voltage$( V_ th)$, and drain-induced barrier-height lowering are numerically calculated for the device with different channel length ($L$) and the thickness of silicon film$( T_ si)$. Based on our two-dimensional density… CONTINUE READING
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