A Compact eFUSE Programmable Array Memory for SOI CMOS

@article{Safran2007ACE,
  title={A Compact eFUSE Programmable Array Memory for SOI CMOS},
  author={John Safran and Alan Leslie and Gregory Fredeman and C. Kothandaraman and Alberto Cestero and Xiang Chen and Raj Rajeevakumar and Deok-kee Kim and Yan Zun Li and Diego Macias Moy and Norman Robson and Toshiaki Kirihata and S. S. Iyer},
  journal={2007 IEEE Symposium on VLSI Circuits},
  year={2007},
  pages={72-73}
}
Demonstrating a >10X density increase over traditional VLSI fuse circuits, a compact eFUSE programmable array memory configured as a 4 Kb one-time programmable ROM (OTPROM) is presented using a 6.2 mum2 NiSix silicide electromigration ITIR cell in 65 nm SOI CMOS. A 20 mus programming time at 1.5 V is achieved by asymmetrical scaling of the fuse and a shared differential sensing scheme. Having zero process cost adder, eFUSE is fully compatible with standard VLSI manufacturing.