A Compact Model for Static and Dynamic Operation of Symmetric Double-Gate Junction FETs

@article{Makris2018ACM,
  title={A Compact Model for Static and Dynamic Operation of Symmetric Double-Gate Junction FETs},
  author={Nikolaos Makris and Martin Bucher and Farzan Jazaeri and Jean-Michel Sallese},
  journal={2018 48th European Solid-State Device Research Conference (ESSDERC)},
  year={2018},
  pages={238-241}
}
The present work describes a novel charge-based compact model of the symmetric double-gate junction field effect transistor (DG JFET) for circuit simulation. The model is physics-based and addresses static and capacitive behavior of the JFET. The model covers all regions of device operation of the depletion mode JFET, relies only on physical and electrical parameters of the device, and includes short-channel effects. The model is validated with respect to TCAD simulation as well as with respect… CONTINUE READING

Similar Papers

References

Publications referenced by this paper.
SHOWING 1-10 OF 23 REFERENCES

Best practices for compact modeling in Verilog- A,

C. C. McAndrew
  • IEEE J. Electron Devices Soc.,
  • 2015
VIEW 4 EXCERPTS
HIGHLY INFLUENTIAL

Sallese, Modeling nanowire and double-gate junctionless field-effect transistors

F. Jazaeri, J.-M
  • 2018
VIEW 1 EXCERPT

Sallese, Modeling nanowire and double-gate junctionless field-effect transistors

F. Jazaeri, J.-M
  • 2018
VIEW 1 EXCERPT

A physics-based model for a SiC JFET accounting for electric-field-dependent mobility

E. Platania, Z. Chen
  • IEEE Trans. Ind. Appl.,
  • 2011
VIEW 1 EXCERPT