A Compact Interface-Trapped-Charge-Induced Subthreshold Current Model for Surrounding-Gate MOSFETs

  • Te-Kuang Chiang
  • Published 2014 in
    IEEE Transactions on Device and Materials…

Abstract

With the effects of equivalent oxide charges on the flatband voltage, we report a compact interface-trapped-charge-induced subthreshold current model for the surrounding-gate (SRG) MOSFETs based on the scaling equation and the drift-diffusion approach. It is found that a thin gate oxide can effectively reduce the subthreshold current degradation caused by… (More)

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