A Case Study on Common Mode Electromagnetic Interference Characteristics of GaN HEMT and Si MOSFET Power Converters for EV/HEVs

@article{Han2017ACS,
  title={A Case Study on Common Mode Electromagnetic Interference Characteristics of GaN HEMT and Si MOSFET Power Converters for EV/HEVs},
  author={Di Han and Casey T. Morris and Woongkul Lee and Bulent Sarlioglu},
  journal={IEEE Transactions on Transportation Electrification},
  year={2017},
  volume={3},
  pages={168-179}
}
Wide bandgap semiconductors, such as gallium nitride (GaN)-based power devices have become increasingly popular in the automotive industry due to their low on-state resistance and fast switching capabilities. These devices are sought to replace silicon (Si) devices in power electronics converters for vehicular applications. GaN devices dissipate less energy during each switching event, thus, GaN converter designers can significantly increase the switching frequency without increasing switching… CONTINUE READING

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