A CMOS class-A 65nm power amplifier for 60 GHz applications

@article{Quemerais2010ACC,
  title={A CMOS class-A 65nm power amplifier for 60 GHz applications},
  author={Thomas Quemerais and Laurence Moquillon and Sebastien Pruvost and J. Fournier and Ph. Benech and N. Corrao},
  journal={2010 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF)},
  year={2010},
  pages={120-123}
}
A millimeter-wave power amplifier (PA) implemented in a 65 nm CMOS process with 8-metal layers and transistor fT/fMAX of 160/200 GHz is reported. The PA operates from a 1.2 V supply voltage. A power gain of 13.4 dB, an output P1dB of 12.2 dBm with 7.6 % PAE and a saturated output power of 13.8 dBm at 58 GHz are measured. S11 and S22 are lower than 10 dB, which ensures an input and output matching to a 50 ¿ impedance. These results are obtained thanks to accurate millimeter wave models for MOS… CONTINUE READING

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