A CMOS-MEMS resonant gate field effect transistor

  title={A CMOS-MEMS resonant gate field effect transistor},
  author={Chi-Hang Chin and Cheng-Syun Li and Ming-Huang Li and Sheng-Shian Li},
  journal={2013 Transducers & Eurosensors XXVII: The 17th International Conference on Solid-State Sensors, Actuators and Microsystems (TRANSDUCERS & EUROSENSORS XXVII)},
A high-frequency CMOS-MEMS resonant gate field effect transistor (RGFET) composed of a metal/oxide composite resonant-gate structure and an FET transducer has been demonstrated for the first time utilizing the conventional CMOS technology with Q > 1,700 and the signal-to-feedthrough ratio greater than 40 dB under a direct two-port measurement. As compared to the capacitive-type MEMS resonators, the proposed CMOS-MEMS RGFET features an inherent transconductance gain (gm) offered by the FET… CONTINUE READING


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