A CMOS-MEMS resonant gate field effect transistor

@article{Chin2013ACR,
  title={A CMOS-MEMS resonant gate field effect transistor},
  author={Chi-Hang Chin and Cheng-Syun Li and Ming-Huang Li and Sheng-Shian Li},
  journal={2013 Transducers & Eurosensors XXVII: The 17th International Conference on Solid-State Sensors, Actuators and Microsystems (TRANSDUCERS & EUROSENSORS XXVII)},
  year={2013},
  pages={2284-2287}
}
A high-frequency CMOS-MEMS resonant gate field effect transistor (RGFET) composed of a metal/oxide composite resonant-gate structure and an FET transducer has been demonstrated for the first time utilizing the conventional CMOS technology with Q > 1,700 and the signal-to-feedthrough ratio greater than 40 dB under a direct two-port measurement. As compared to the capacitive-type MEMS resonators, the proposed CMOS-MEMS RGFET features an inherent transconductance gain (gm) offered by the FET… CONTINUE READING

References

Publications referenced by this paper.
SHOWING 1-10 OF 10 REFERENCES

et al

  • O. Brand
  • ‘‘Thermally actuated silicon tuning fork…
  • 2012
1 Excerpt

ZnO based film bulk acoustic resonator as infrared sensor,

  • Z. Wang
  • Thin Solid Films,
  • 2011
1 Excerpt

et al

  • D. F. Guillou
  • “Laminated, sacrificial-poly MEMS technology in…
  • 1800

Similar Papers

Loading similar papers…