A CMOS Image Sensor with 240 μ V / e-Conversion Gain , 200 ke-Full Well Capacity and 190-1000 nm Spectral Response

@inproceedings{Nasuno2015ACI,
  title={A CMOS Image Sensor with 240 μ V / e-Conversion Gain , 200 ke-Full Well Capacity and 190-1000 nm Spectral Response},
  author={Satoshi Nasuno and Shunichi Wakashima and Fumiaki Kusuhara and Rihito Kuroda and Shigetoshi Sugawa},
  year={2015}
}
In this paper, the structure and the performances of a CMOS image sensor with high conversion gain (CG): 240 μV/e, high full well capacity (FWC): 200 ke, wide spectral response: 190-1000 nm and high robustness to ultraviolet (UV) light are described. The developed CMOS image sensor was fabricated by introducing the following key technologies; small capacitance floating diffusion (FD) structure with lateral overflow integration capacitor (LOFIC) for pixel and a thin surface high concentration p… CONTINUE READING