A CMOS Digital SiPM With Focal-Plane Light-Spot Statistics for DOI Computation

@article{Vornicu2017ACD,
  title={A CMOS Digital SiPM With Focal-Plane Light-Spot Statistics for DOI Computation},
  author={Ion Vornicu and Franco N. Bandi and Ricardo Carmona-Galx00E1n and x00C1ngel Rodrx00EDguez-Vx00E1zquez},
  journal={IEEE Sensors Journal},
  year={2017},
  volume={17},
  pages={632-643}
}
Silicon photomultipliers can be used to infer the depth-of-interaction (DOI) in scintillator crystals. DOI can help to improve the quality of the positron emission tomography images affected by the parallax error. This paper contemplates the computation of DOI based on the standard deviation of the light distribution. The simulations have been carried out by GAMOS. The design of the proposed digital silicon photo-multiplier (d-SiPM) with focal plane detection of the center of mass position and… CONTINUE READING