A Broadband Low-Cost Direct-Conversion Receiver Front-End in 90 nm CMOS

@article{Zhan2008ABL,
  title={A Broadband Low-Cost Direct-Conversion Receiver Front-End in 90 nm CMOS},
  author={J. Zhan and B. R. Carlton and S. S. Taylor},
  journal={IEEE Journal of Solid-State Circuits},
  year={2008},
  volume={43},
  pages={1132-1137}
}
Transistors in aggressively scaled CMOS technologies have fT greater than 150 GHz, which exceeds requirements for most existing commercial applications below 10 GHz. Excess transistor performance can be traded-off for cost by designing out inductors. This paper presents a prototype which exploits the speed of transistors to design highly integrated broadband receiver front-ends. The inductor-less prototype operates from 2 to 5.8 GHz and dissipates 85 mW at 5 GHz while occupying 0.2 mm2 active… CONTINUE READING
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