A Broadband FET Amplifier in Integrating Waveguide Technology with an E-Plane Microstrip Insert

@article{Meier1987ABF,
  title={A Broadband FET Amplifier in Integrating Waveguide Technology with an E-Plane Microstrip Insert},
  author={Ulrich E. Meier and J. H. Hinken and W. Von Stenzl},
  journal={1987 17th European Microwave Conference},
  year={1987},
  pages={119-124}
}
This paper describes a broadband low noise waveguide amplifier with a GaAs-FET, combining advantages of a planar technology with advantages of the integrating waveguide technology (INWATE). A new waveguide-to-microstrip transition allows easy assembling, small dimensions, and good electrical behaviour. The design of a single stage X-band amplifier results in a gain of 9 ± 1.3dB over a bandwidth of 3.3 GHz with an associated noise figure of less than 3dB. 

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