A Bias-Dependent Single-Event Compact Model Implemented Into BSIM4 and a 90 nm CMOS Process Design Kit

@article{Kauppila2009ABS,
  title={A Bias-Dependent Single-Event Compact Model Implemented Into BSIM4 and a 90 nm CMOS Process Design Kit},
  author={J. S. Kauppila and A. L. Sternberg and M. L. Alles and A. Matthew Francis and James A. Holmes and O. A. Amusan and L. W. Massengill},
  journal={IEEE Transactions on Nuclear Science},
  year={2009},
  volume={56},
  pages={3152-3157}
}
A single-event model capable of capturing bias- dependent effects has been developed and integrated into the BSIM4 transistor model and a 90 nm CMOS process design kit. Simulation comparisons with mixed mode TCAD are presented. 
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Trends in Single Event Pulse Widths and Pulse Shapes in Deep Submicron CMOS

  • S. DasGupta
  • M. S. thesis, Dept. Elect. Eng. and Comp. Science…
  • 2007
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