A 9T subthreshold SRAM bitcell with data-independent bitline leakage for improved bitline swing and variation tolerance

@article{Li2010A9S,
  title={A 9T subthreshold SRAM bitcell with data-independent bitline leakage for improved bitline swing and variation tolerance},
  author={Qi Li and Tony Tae-Hyoung Kim},
  journal={2010 IEEE Asia Pacific Conference on Circuits and Systems},
  year={2010},
  pages={260-263}
}
This paper describes a 9T SRAM bitcell with data-independent bitline leakage for improving bitline voltage swing and variation tolerance. The data-independent bitline leakage eliminates the bitline voltage swing dependency on column data and demonstrates better variation tolerance. Simulations show that the proposed SRAM bitcell enables 1024 cells to be… CONTINUE READING